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for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 1 hmc618lp3 / 618LP3E gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz v08.1210 general description features functional diagram noise f igur e: 0.75 db gain: 19 db oip 3: 36 dbm s ingle s upply: +3v to +5v 50 o hm m atched i nput/ o utput 16 l ead 3x3mm sm t p ackage: 9 mm 2 typical applications electrical specifcations t a = +25 c, rbias = 470 ohm for vdd1 = vdd2 = 5v p arameter vdd = 5 vdc units m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. f requency r ange 1200 - 1700 1700 - 2000 2000 - 2200 m hz gain 19 23 16 19 13.5 17 db gain variation o ver temperature 0.012 0.008 0.008 db/c noise f igure 0.65 0.85 0.75 1.1 0.85 1.15 db i nput r eturn l oss 22.5 18 19.5 db o utput r eturn l oss 13 12.5 10 db o utput p ower for 1 db compression ( p 1db) 14.5 19 16.5 20 18 20 dbm s aturated o utput p ower ( p sat) 20.5 20.5 20.5 dbm o utput third o rder i ntercept ( ip 3) 33.5 35 35.5 dbm s upply current ( i dd) 89 118 89 118 89 118 ma * r bias resistor sets current, see application circuit herein the h m c618 lp 3 e is a gaas ph em t mmi c l ow noise amplifer that is ideal for cellular/3g and l t e / w i m ax/4g basestation front-end receivers operating between 1.2 - 2.2 ghz. the amplifer has been optimized to provide 0.75 db noise fgure, 19 db gain and +36 dbm output ip 3 from a single supply of +5v. i nput and output return losses are excellent and the l na requires minimal external matching and bias decoupling components. the h m c618 lp 3 e shares the same package and pinout with the h m c617 lp 3 e 0.55 - 1.2 ghz l na. the h m c618 lp 3 e can be biased with +3v to +5v and features an externally adjustable supply current which allows the designer to tailor the linearity performance of the l na for each application. the h m c618 lp 3( e ) offers improved noise fgure versus the previously released h m c375 lp 3( e ) and the h m c382 lp 3( e ). the h m c618 lp 3 e is ideal for: ? cellular/3g and l t e / w i m ax/4g ? bt s & i nfrastructure ? r epeaters and f emto cells ? p ublic s afety r adios
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 2 electrical specifcations t a = +25 c, rbias = 10k ohm for vdd1 = vdd2 = 3v p arameter vdd = 3 vdc units m in. typ. m ax. m in. typ. m ax. m in. typ. m ax. f requency r ange 1200 - 1700 1700 - 2000 2000 - 2200 m hz gain 18 22 15 18 12.5 15.8 db gain variation o ver temperature 0.009 0.009 0.009 db/c noise f igure 0.8 1.1 0.9 1.2 0.9 1.2 db i nput r eturn l oss 26 17 19 db o utput r eturn l oss 14 13 11 db o utput p ower for 1 db compression ( p 1db) 10 15 12 15 13 15 dbm s aturated o utput p ower ( p sat) 16 16 16 dbm o utput third o rder i ntercept ( ip 3) 28 28 28 dbm s upply current ( i dd) 47 65 47 65 47 65 ma * r bias resistor sets current, see application circuit herein broadband gain & return loss [1] [2] gain vs. temperature [1] -25 -15 -5 5 15 25 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 vdd=5v vdd=3v response (db) frequency (ghz) s21 s22 s11 12 14 16 18 20 22 24 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c - 40c gain (db) frequency (ghz) input return loss vs. temperature [1] gain vs. temperature [2] 10 12 14 16 18 20 22 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c - 40c gain (db) frequency (ghz) -25 -20 -15 -10 -5 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c - 40c return loss (db) frequency (ghz) [1] vdd = 5v, r bias = 470 o hm [2] vdd = 3v, r bias = 10k o hm hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz 1700 to 2200 mhz tune
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 3 output return loss vs. temperature [1] reverse isolation vs. temperature [1] -25 -20 -15 -10 -5 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c - 40c return loss (db) frequency (ghz) -40 -35 -30 -25 -20 -15 -10 -5 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c - 40c isolation (db) frequency (ghz) [1] vdd = 5v, r bias = 470 o hm [2] vdd = 3v, r bias = 10k o hm [3] m easurement reference plane shown on evaluation p cb drawing. psat vs. temperature [1] [2] noise figure vs temperature [1] [2] [3] output p1db vs. temperature [1] [2] output ip3 vs. temperature [1] [2] 24 26 28 30 32 34 36 38 40 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25c +85c - 40c ip3 (dbm) frequency (ghz) vdd=5v vdd=3v 10 12 14 16 18 20 22 24 1.6 1.7 1.8 1.9 2 2.1 +25c +85c - 40c p1db (dbm) frequency (ghz) vdd=3v vdd=5v 10 12 14 16 18 20 22 24 1.6 1.7 1.8 1.9 2 2.1 +25c +85c -40c psat (dbm) frequency (ghz) vdd=5v vdd=3v 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 vdd=5v vdd=3v noise figure (db) frequency (ghz) +85c +25 c -40c hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz 1700 to 2200 mhz tune
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 4 [1] vdd = 5v, r bias = 470 o hm [2] vdd = 3v, r bias = 10k o hm output ip3 and idd vs. supply voltage @ 1750 mhz [1] output ip3 and idd vs. supply voltage @ 1750 mhz [2] hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz 24 26 28 30 32 34 36 38 0 20 40 60 80 100 120 140 2.7 3 3.3 ip3 (dbm) idd (ma) voltage supply (v) 24 26 28 30 32 34 36 38 0 20 40 60 80 100 120 140 4.5 5 5.5 ip3 (dbm) idd (ma) voltage supply (v) output ip3 and idd vs. supply voltage @ 2100 mhz [1] output ip3 and idd vs. supply voltage @ 2100 mhz [2] 24 26 28 30 32 34 36 38 0 20 40 60 80 100 120 140 2.7 3 3.3 ip3 (dbm) idd (ma) voltage supply (v) 24 26 28 30 32 34 36 38 0 20 40 60 80 100 120 140 4.5 5 5.5 ip3 (dbm) idd (ma) voltage supply (v) power compression @ 1750 mhz [1] power compression @ 1750 mhz [2] -10 0 10 20 30 -18 -16 -14 -12 -10 -8 -6 -4 -2 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -10 0 10 20 30 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) 1700 to 2200 mhz tune
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 5 [1] vdd = 5v, r bias = 470 o hm [2] vdd = 3v, r bias = 10k o hm hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz power compression @ 2100 mhz [1] power compression @ 2100 mhz [2] -10 0 10 20 30 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 6 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) -10 0 10 20 30 -18 -16 -14 -12 -10 -8 -6 -4 -2 0 2 4 pout gain pae pout (dbm), gain (db), pae (%) input power (dbm) gain, power & noise figure vs. supply voltage @ 1750 mhz [1] gain, power & noise figure vs. supply voltage @ 1750 mhz [2] gain, power & noise figure vs. supply voltage @ 2100 mhz [1] gain, power & noise figure vs. supply voltage @ 2100 mhz [2] 12 14 16 18 20 22 24 0 0.2 0.4 0.6 0.8 1 1.2 4.5 5 5.5 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply voltage (v) 12 14 16 18 20 22 24 0 0.2 0.4 0.6 0.8 1 1.2 2.7 3 3.3 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply voltage (v) 12 14 16 18 20 22 24 0 0.2 0.4 0.6 0.8 1 1.2 4.5 5 5.5 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply voltage (v) 12 14 16 18 20 22 24 0 0.2 0.4 0.6 0.8 1 1.2 2.7 3 3.3 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply voltage (v) 1700 to 2200 mhz tune
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 6 output ip3 vs. rbias @ 1750 mhz gain, noise figure vs. rbias @ 1750 mhz 22 24 26 28 30 32 34 36 100 1000 10000 vdd=5v vdd=3v ip3 (dbm) rbias (ohms) 14 15 16 17 18 19 20 21 22 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 100 1000 10000 vdd=5v vdd=3v gain (db) noise figure (db) rbias(ohms) [1] vdd = 5v, r bias = 470 o hm [2] vdd = 3v, r bias = 10k o hm output ip3 vs. rbias @ 2100 mhz gain, noise figure vs. rbias @ 2100 mhz 14 15 16 17 18 19 20 0 0.2 0.4 0.6 0.8 1 1.2 100 1000 10000 vdd=5v vdd=3v gain (db) noise figure (db) rbias(ohms) 24 26 28 30 32 34 36 38 100 1000 10000 vdd=5v vdd=3v ip3 (dbm) rbias (ohms) hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz 1700 to 2200 mhz tune
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 7 output return loss vs. temperature [1] -20 -15 -10 -5 0 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25c +85c -40c frequency (ghz) return loss (db) hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz input return loss vs. temperature [1] -40 -35 -30 -25 -20 -15 -10 -5 0 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25c +85c -40c frequency (ghz) return loss (db) output return loss vs. temperature [2] -20 -15 -10 -5 0 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25 c +85 c - 40 c return loss (db) frequency (ghz) [1] vdd = 5v, r bias = 470 o hm [2] vdd = 3v, r bias = 10k o hm input return loss vs. temperature [2] -40 -30 -20 -10 0 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25 c +85 c - 40 c return loss (db) frequency (ghz) gain vs. temperature [1] 1200 to 1700 mhz tune 16 18 20 22 24 26 28 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25c +85c - 40c gain (db) frequency (ghz) gain vs. temperature [2] 16 18 20 22 24 26 28 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25c +85c - 40c gain (db) frequency (ghz)
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 8 reverse isolation vs. temperature [1] -50 -40 -30 -20 -10 0 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25 c +85 c - 40 c isolation (db) frequency (ghz) output p1db vs. temperature [2] noise figure vs. temperature [1] 8 10 12 14 16 18 20 22 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25 c +85 c - 40 c p1db (dbm) frequency (ghz) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 noise figure (db) frequency (ghz) +85c +25 c -40c reverse isolation vs. temperature [2] -50 -40 -30 -20 -10 0 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25 c +85 c - 40 c isolation (db) frequency (ghz) hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz noise figure vs. temperature [2] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25 c +85 c - 40 c noise figure (db) frequency (ghz) output p1db vs. temperature [1] 8 10 12 14 16 18 20 22 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25c +85c - 40c p1db (dbm) frequency (ghz) [1] vdd = 5v, r bias = 470 o hm [2] vdd = 3v, r bias = 10k o hm 1200 to 1700 mhz tune
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 9 output ip3 vs. temperature [1] 22 24 26 28 30 32 34 36 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25c +85c -40c ip3 (dbm) frequency (ghz) hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz output ip3 vs. temperature [2] 22 24 26 28 30 32 34 36 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25 c +85 c - 40 c ip3 (dbm) frequency (ghz) [1] vdd = 5v, r bias = 470 o hm [2] vdd = 3v, r bias = 10k o hm [3] w ith vdd= 3v and r bias < 1k o hm may result in the part becoming conditionally stable which is not recommended. vdd1 = vdd2 (v) r bias i dd1 + i dd2 (ma) m in ( o hms) m ax ( o hms) r 1 ( o hms) 3v 1k [3] o pen circuit 1k 28 1.5k 34 10k 47 5v 0 o pen circuit 120 71 270 84 470 89 absolute bias resistor range & recommended bias resistor values for idd psat vs. temperature [1] 8 10 12 14 16 18 20 22 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25c +85c -40c psat (dbm) frequency (ghz) psat vs. temperature [2] 8 10 12 14 16 18 20 22 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 +25 c +85 c - 40 c psat (dbm) frequency (ghz) 1200 to 1700 mhz tune
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 10 hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz absolute maximum ratings drain bias voltage (vdd1, vdd2) +6v rf input p ower ( rfin) (vdd = +5 vdc) +10 dbm channel temperature 150 c continuous pdiss (t= 85 c) (derate 9.68 m w /c above 85 c) 0.63 w thermal r esistance (channel to ground paddle) 103.4 c/ w s torage temperature -65 to +150 c o perating temperature -40 to +85 c vdd (vdc) idd (ma) 2.7 35 3.0 47 3.3 58 4.5 72 5.0 89 5.5 106 note: amplifer will operate over full voltage ranges shown above. typical supply current vs. vdd r bias = 10 kohm for 3v r bias = 470 ohm for 5v ele ct ros tat ic se n si t i v e de v ic e o b ser v e hand li ng pre caut io n s outline drawing package information p art number p ackage body m aterial l ead f inish msl r ating p ackage m arking [3] h m c618 lp 3 l ow s tress i njection m olded p lastic s n/ p b s older msl 1 [1] 618 xxxx h m c618 lp 3 e r oh s -compliant l ow s tress i njection m olded p lastic 100% matte s n msl 1 [2] 618 xxxx [1] m ax peak refow temperature of 235 c [2] m ax peak refow temperature of 260 c [3] 4-digit lot number xxxx n ot es : 1. le ad fr a me m at eri a l : c opper a llo y 2. d ime n sio n s a re i n i nch es [ millime t ers ] 3. le ad sp ac i ng t oler anc e is n o n-cu m u l at i v e 4. p ad bu rr le ngth s ha ll b e 0.15mm m ax im u m . p ad bu rr h ei ght s ha ll b e 0.05mm m ax im u m . 5. p ackag e w a rp s ha ll n ot e xc ee d 0.05mm. 6. a ll g ro und le ad s and g ro und p add le m u s t b e sol d ere d to p cb rf g ro und. 7. refer to h i tt i t e a ppli cat io n n ot e for s ugg es t e d l and p att er n.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 11 hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz [1] vdd = 5v, r bias = 470 o hm [2] vdd = 3v, r bias = 10k pin number f unction description i nterface schematic 1, 3 - 5, 7, 9, 12, 14, 16 n/c no connection required. these pins may be connected to rf /dc ground without affecting performance. 2 rfin this pin is dc coupled and matched to 50 o hms. 6, 10 gnd this pin and ground paddle must be connected to r c/dc ground. 8 res this pin is used to set the dc current of the amplifer by selection of the external bias resistor. s ee application circuit. 11 rfout this pin is matched to 50 o hms. 13, 15 vdd2, vdd1 p ower s upply voltage for the amplifer. e xternal bypass capacitors of 1000 p f , and 0.47 f are required. application circuit, 1700 to 2200 mhz tune
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 12 evaluation pcb, 1700 to 2200 mhz tune i tem description j1, j2 p cb m ount sm a rf connector j3 - j5 dc p in c2, c4 1000 p f capacitor, 0603 p kg.. c3, c5 0.47 f capacitor, tantalum l 1 15 nh, i nductor, 0603 p kg. l 3 6.8 nh, i nductor, 0603 p kg. c6 220 p f capacitor, 0402 p kg. c1 10 n f capacitor, 0402 p kg. r 1 470 o hm resistor, 0402 p kg. u1 h m c618 lp 3( e ) amplifer p cb [2] 120586 e valuation p cb [1] r eference this number when ordering complete evaluation p cb hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz i tem content p art number e valuation p cb h m c618 lp 3 e e valuation p cb 117905-h m c618 lp 3 e list of materials for evaluation pcb evaluation pcb ordering information the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request.
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 13 application circuit, 1200 to 1700 mhz tune hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz
for price, delivery and to place orders: hittite microwave corporation, 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com application support: phone: 978-250-3343 or apps@hittite.com amplifiers - l ow noise - sm t 7 7 - 14 evaluation pcb, 1200 to 1700 mhz tune i tem description j1, j2 p cb m ount sm a rf connector j3 - j5 dc p in c1 10 n f capacitor, 0402 p kg. c2, c4 1000 p f capacitor, 0603 p kg.. c3, c5 0.47 f capacitor, 0603 p kg. c6 100 p f capacitor, 0402 p kg. c7 3 p f capacitor, 0402 p kg. l 1 27 nh, i nductor, 0603 p kg. l 2 5.6 nh, i nductor, 0603 p kg. l 3 18 nh, i nductor, 0603 p kg. r 1 470 o hm resistor, 0402 p kg. u1 h m c618 lp 3( e ) amplifer p cb [1] 120586 e valuation p cb [1] circuit board m aterial: r ogers 4350. i tem content p art number e valuation p cb h m c618 lp 3 e e valuation p cb e va l 01-h m c618 lp 3 e list of materials for evaluation pcb evaluation pcb ordering information the circuit board used in this application should use rf circuit design techniques. s ignal lines should have 50 o hm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation board should be mounted to an appro - priate heat sink. the evaluation circuit board shown is available from hittite upon request. hmc618lp3 / 618LP3E v08.1210 gaas smt phemt low noise amplifier, 1.2 - 2.2 ghz

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